Manufacturer: IXYS
Product Type: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-Source Breakdown Voltage: 650 V
Id-Continuous drain current: 22 A
Rds On - drain-source on-resistance: 160 mOhms
Vgs - Gate-source voltage: - 30 V, + 30 V
Vgs th-Gate source threshold voltage: 2.7 V
Qg - gate charge: 38 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power dissipation: 390 W
Channel mode: Enhancement
Brand Name: HiPerFET
Series: 650V Ultra Junction X2
Package: Tube
Trademark: IXYS
Configuration: Single
Drop time: 10 ns
Forward Transconductance - Min: 8 S
Product Type: MOSFET
Rise Time: 35 ns
Package Quantity: 30/tube
Subcategory: MOSFETs
Typical Off Delay Time: 33 ns
Typical Turn-On Delay Time: 38 ns
Unit weight: 6 g
131-2899-0370
2881438908
xilinx@casi-ic.com
Elan Tsao